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74LVC2G132DCURE4 数据表(PDF) 2 Page - Texas Instruments |
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74LVC2G132DCURE4 数据表(HTML) 2 Page - Texas Instruments |
2 / 18 page 1A 1B 1Y 2A 2B 2Y 7 3 1 2 5 6 SN74LVC2G132 SCES547D – FEBRUARY 2004 – REVISED DECEMBER 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Function Table (Each Gate) INPUTS OUTPUT Y A B L L H L H H H L H H H L Logic Diagram (Positive Logic) Absolute Maximum Ratings (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range –0.5 6.5 V VI Input voltage range(2) –0.5 6.5 V VO Voltage range applied to any output in the high-impedance or power-off state (2) –0.5 6.5 V VO Voltage range applied to any output in the high or low state (2) (3) –0.5 VCC + 0.5 V IIK Input clamp current VI < 0 –50 mA IOK Output clamp current VO < 0 –50 mA IO Continuous output current ±50 mA Continuous current through VCC or GND ±100 mA DCT package 220 θJA Package thermal impedance(4) DCU package 227 °C/W YZP package 102 Tstg Storage temperature range –65 150 °C (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed. (3) The value of VCC is provided in the recommended operating conditions table. (4) The package thermal impedance is calculated in accordance with JESD 51-7 2 Submit Documentation Feedback Copyright © 2004–2013, Texas Instruments Incorporated Product Folder Links: SN74LVC2G132 |
类似零件编号 - 74LVC2G132DCURE4 |
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类似说明 - 74LVC2G132DCURE4 |
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