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2SK3130 数据表(PDF) 5 Page - Toshiba Semiconductor |
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2SK3130 数据表(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3130 2004-07-06 5 rth − tw Pulse width tw (s) Drain-source voltage VDS (V) Safe operating area Channel temperature (initial) Tch (°C) EAS − Tch 0.001 10 µ 100 µ 1 m 0.01 0.1 1 10 0.01 0.1 1 10 T PDM t Duty = t/T Rth (ch-c) = 3.125°C/W Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 0.01 1 0.1 1 10 10 100 1000 100 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (pulsed) * ID max (continuous) DC operation Tc = 25°C 100 µs * 1 ms * VDSS max 0 25 50 75 100 150 125 100 200 300 400 500 −15 V 15 V Test circuit Wave form IAR BVDSS VDD VDS RG = 25 Ω VDD = 90 V, L = 16.8 mH ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = DD V VDSS B VDSS B 2 I L 2 1 AS E |
类似零件编号 - 2SK3130 |
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类似说明 - 2SK3130 |
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