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IRF840FI 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF840FI 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF840FI FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.5 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn |
类似零件编号 - IRF840FI |
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类似说明 - IRF840FI |
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