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CDDFN-6-0504P 数据表(PDF) 1 Page - Bourns Electronic Solutions

部件名 CDDFN-6-0504P
功能描述  TVS/Steering Diode Array
Download  4 Pages
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制造商  BOURNS [Bourns Electronic Solutions]
网页  http://www.bourns.com
标志 BOURNS - Bourns Electronic Solutions

CDDFN-6-0504P 数据表(HTML) 1 Page - Bourns Electronic Solutions

  CDDFN-6-0504P Datasheet HTML 1Page - Bourns Electronic Solutions CDDFN-6-0504P Datasheet HTML 2Page - Bourns Electronic Solutions CDDFN-6-0504P Datasheet HTML 3Page - Bourns Electronic Solutions CDDFN-6-0504P Datasheet HTML 4Page - Bourns Electronic Solutions  
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Features
Lead free as standard
RoHS compliant*
Low capacitance - 1.2 pF
No insertion loss to 2 GHz
ESD, EFT, surge protection
Applications
USB 2.0 & USB OTG
Multimedia card interface
SD card interface
SIM ports
Gigabit Ethernet
Absolute Maximum Ratings
CDDFN6-0504P - TVS/Steering Diode Array
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter
Symbol
CDDFN6-0504P
Unit
Peak Pulse Power (tp = 8/20 µs) (NOTE 1)
Ppk
150
W
Peak Pulse Current (tp = 8/20 µs) (NOTE 1)
IPP
6.5
A
Storage Temperature
TSTG
-55 to +150
ºC
Operating Temperature
TOPR
-55 to +125
ºC
Operating Supply Voltage
VDC
6
V
ESD per IEC 61000-4-2 (Air)(I/O to GND)
ESD per IEC 61000-4-2 (Contact) (I/O to GND)
VESD_IO
18
14
kV
ESD per IEC 61000-4-2 (Air)(VCC to GND)
ESD per IEC 61000-4-2 (Contact)(VCC to GND)
VESD_VCC
30
30
kV
DC Voltage at any I/O Pin
VIO
(GND-0.5) to (VCC+0.5)
V
Note 1. See Power Derating Curve.
General Information
The CDDFN6-0504P device provides ESD, EFT and surge protection for high speed data
ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge)
requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a
Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V.
The molded packaged device will mount directly onto the industry standard DFN6 or QFN6
footprint. Bourns® Chip Diodes are easy to handle with standard pick and place equipment
and their flat configuration minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDDFN6-0504P
Unit
Maximum Reverse Standoff Voltage1
VRWM
5.0
V
Maximum Leakage Current1 @ VRWM
ID
5.0
µA
Maximum Channel Leakage Current @ VRWM
ICD
1.0
µA
Minimum Reverse Breakdown Voltage1
@ IBV=1 mA
VBR
6.0
V
Maximum Forward Voltage4 @ IF = 15 mA
VF
1.0
V
Typical Clamping Voltage2
VC
8.1
V
Typical ESD Clamping Voltage -
I/O per IEC 61000-4-2 +6 kV, Contact2
Vclamp_io
12.5
V
Typical ESD Clamping Voltage-VCC1
Vclamp_VCC
9.0
V
Maximum Channel Input Capacitance2
@ VPIN5=5 V, VPIN2=0 V, VIN=2.5 V, f=1 MHz
CIN
1.6
pF
Maximum Channel to Channel Input
Capacitance3 @ VPIN5=5 V, VPIN2=0 V,
VIN=2.5 V, f=1 MHz
C
CROSS
0.14
pF
Maximum Variation of Channel Input
Capacitance @ VPIN5=5 V, VPIN2=0 V, VIN=2.5
V, f=1 MHz. (I/O Pin to GND)
ΔCIN
0.06
pF
Note 1. Pin 5 to Pin 2 (ground).
Note 2. Pin 1, 3, 4 or 6 to Pin 2 (ground).
Note 3. Between any two of pins 1, 3, 4, 6.
Note 4. Pin 2 (ground) to Pin 5.
5
13
GND
46


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