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CDDFN-6-0504P 数据表(PDF) 1 Page - Bourns Electronic Solutions |
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CDDFN-6-0504P 数据表(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page Features ■ Lead free as standard ■ RoHS compliant* ■ Low capacitance - 1.2 pF ■ No insertion loss to 2 GHz ■ ESD, EFT, surge protection Applications ■ USB 2.0 & USB OTG ■ Multimedia card interface ■ SD card interface ■ SIM ports ■ Gigabit Ethernet Absolute Maximum Ratings CDDFN6-0504P - TVS/Steering Diode Array *RoHS Directive 2002/95/EC Jan 27, 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Parameter Symbol CDDFN6-0504P Unit Peak Pulse Power (tp = 8/20 µs) (NOTE 1) Ppk 150 W Peak Pulse Current (tp = 8/20 µs) (NOTE 1) IPP 6.5 A Storage Temperature TSTG -55 to +150 ºC Operating Temperature TOPR -55 to +125 ºC Operating Supply Voltage VDC 6 V ESD per IEC 61000-4-2 (Air)(I/O to GND) ESD per IEC 61000-4-2 (Contact) (I/O to GND) VESD_IO 18 14 kV ESD per IEC 61000-4-2 (Air)(VCC to GND) ESD per IEC 61000-4-2 (Contact)(VCC to GND) VESD_VCC 30 30 kV DC Voltage at any I/O Pin VIO (GND-0.5) to (VCC+0.5) V Note 1. See Power Derating Curve. General Information The CDDFN6-0504P device provides ESD, EFT and surge protection for high speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V. The molded packaged device will mount directly onto the industry standard DFN6 or QFN6 footprint. Bourns® Chip Diodes are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDDFN6-0504P Unit Maximum Reverse Standoff Voltage1 VRWM 5.0 V Maximum Leakage Current1 @ VRWM ID 5.0 µA Maximum Channel Leakage Current @ VRWM ICD 1.0 µA Minimum Reverse Breakdown Voltage1 @ IBV=1 mA VBR 6.0 V Maximum Forward Voltage4 @ IF = 15 mA VF 1.0 V Typical Clamping Voltage2 VC 8.1 V Typical ESD Clamping Voltage - I/O per IEC 61000-4-2 +6 kV, Contact2 Vclamp_io 12.5 V Typical ESD Clamping Voltage-VCC1 Vclamp_VCC 9.0 V Maximum Channel Input Capacitance2 @ VPIN5=5 V, VPIN2=0 V, VIN=2.5 V, f=1 MHz CIN 1.6 pF Maximum Channel to Channel Input Capacitance3 @ VPIN5=5 V, VPIN2=0 V, VIN=2.5 V, f=1 MHz C CROSS 0.14 pF Maximum Variation of Channel Input Capacitance @ VPIN5=5 V, VPIN2=0 V, VIN=2.5 V, f=1 MHz. (I/O Pin to GND) ΔCIN 0.06 pF Note 1. Pin 5 to Pin 2 (ground). Note 2. Pin 1, 3, 4 or 6 to Pin 2 (ground). Note 3. Between any two of pins 1, 3, 4, 6. Note 4. Pin 2 (ground) to Pin 5. 5 13 GND 46 |
类似零件编号 - CDDFN-6-0504P |
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类似说明 - CDDFN-6-0504P |
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