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2SJ172 数据表(PDF) 5 Page - Hitachi Semiconductor |
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2SJ172 数据表(HTML) 5 Page - Hitachi Semiconductor |
5 / 7 page 2SJ172 5 500 –1.0 –20 Reverse Drain Current IDR (A) 200 20 –0.5 –2 –10 5 50 100 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, Ta = 25°C VGS = 0 Pulse Test –0.2 10 –5 10,000 –20 –50 Drain to Source Voltage VDS (V) 100 –10 –30 –40 10 1,000 Typical Capacitance vs. Drain to Source Voltage 0 Crss Coss Ciss VGS = 0 f = 1 MHz 0 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics –20 –80 20 060 80 –100 –60 –40 VDS –10 V 0 –4 –16 –20 –12 –8 VDD = –10 V –50 V –25 V ID = –10 A –25 V VDD = –50 V VGS 500 –1.0 –20 Drain Current ID (A) 200 20 –0.5 –2 –10 5 50 100 –0.2 10 –5 Switching Characteristics tf td (on) tr PW = 10 µs, V GS = –10 V duty < 1% VDD 30V td (off) = . . |
类似零件编号 - 2SJ172 |
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类似说明 - 2SJ172 |
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