IXYN120N65B3D1 datasheet(7/7 Pages) IXYS

部件名	IXYN120N65B3D1

功能描述	International Standard Package

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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IXYS REF: IXY_120N65B3(8D-Y42) 5-06-15

IXYN120N65B3D1

Fig. 22. Diode Forward Characteristics

0

20

40

60

80

100

120

140

160

180

200

00.511.522.5

VF (V)

TJ = 150ºC

TJ = 25ºC

Fig. 23. Reverse Recovery Charge vs. -diF/dt

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

3.6

3.8

200

300

400

500

600

700

800

900

1000

-diF/ dt (A/µs)

50A

75A

IF = 100A

TJ = 150ºC

VR = 400V

Fig. 24. Reverse Recovery Current vs. -diF/dt

15

20

25

30

35

40

45

50

200

300

400

500

600

700

800

900

1000

diF/dt (A/µs)

IF = 100A

50A

75A

TJ = 150ºC

VR = 400V

Fig. 25. Reverse Recovery Time vs. -diF/dt

130

140

150

160

170

180

190

200

210

200

300

400

500

600

700

800

900

1000

-diF/dt (A/µs)

IF = 100A

75A

50A

TJ = 150ºC

VR = 400V

Fig. 27. Maximum Transient Thermal Impedance (Diode)

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

Pulse Width (s)

Fig. 26. Dynamic Parameters QRR, IRR vs.

Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

20

40

60

80

100

120

140

160

TJ (ºC)

KF IRR

KF QRR

VR = 400V

I F = 100A

-dIF/dt = 700A/µs

类似零件编号 - IXYN120N65B3D1

制造商	部件名	数据表	功能描述
IXYS Corporation	IXYN120N65C3D1	226Kb / 7P	International Standard Package

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