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IXYH40N65C3H1 数据表(PDF) 2 Page - IXYS Corporation

部件名 IXYH40N65C3H1
功能描述  Optimized for 20-60kHz Switching
Download  7 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXYH40N65C3H1 数据表(HTML) 2 Page - IXYS Corporation

  IXYH40N65C3H1 Datasheet HTML 1Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 2Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 3Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 4Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 5Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 6Page - IXYS Corporation IXYH40N65C3H1 Datasheet HTML 7Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N65C3H1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
e
P
TO-247 (IXYH) Outline
1
2
3
Terminals: 1 - Gate
2 - Collector
3 - Emitted
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Reverse Sonic Diode (FRD)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
V
F
I
F = 30A, VGE = 0V, Note 1
2.5
V
T
J = 150°C
2.15
V
I
RM
T
J = 150°C
32
A
t
rr
T
J = 150°C
78
ns
R
thJC
0.60 °C/W
I
F = 30A, VGE = 0V,
-di
F/dt = 900A/μs, VR = 300V
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 40A, VCE = 10V, Note 1
16
27
S
C
ies
1980
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
215
pF
C
res
40
pF
Q
g(on)
70
nC
Q
ge
I
C = 40A, VGE = 15V, VCE = 0.5 • VCES
14
nC
Q
gc
34
nC
t
d(on)
26
ns
t
ri
40
ns
E
on
0.86
mJ
t
d(off)
106
ns
t
fi
52
ns
E
off
0.40
0.75
mJ
t
d(on)
25
ns
t
ri
40
ns
E
on
1.33
mJ
t
d(off)
126
ns
t
fi
80
ns
E
off
0.46
mJ
R
thJC
0.50 °C/W
R
thCS
0.21
°C/W
Inductive load, T
J = 25°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 10
Note 2
Inductive load, T
J = 150°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 10
Note 2


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