BUZ60B datasheet(2/2 Pages) ISC

部件名	BUZ60B

功能描述	SOA is Power Dissipation Limited

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel Mosfet Transistor

BUZ60B

·ELECTRICAL CHARACTERISTICS (T

C=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

400

V

VGS(TH)

Gate Threshold Voltage

VDS= VGS; ID= 1mA

2.1

4

V

RDS(ON)

Drain-Source On-stage Resistance

VGS= 10V; ID= 2.5A

1.5

Ω

IGSS

Gate Source Leakage Current

VGS= ±20V;VDS= 0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 400V; VGS= 0

250

uA

VSD

Diode Forward Voltage

IF=9A; VGS= 0

1.5

V

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