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GS70328TS-10I 数据表(PDF) 2 Page - GSI Technology |
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GS70328TS-10I 数据表(HTML) 2 Page - GSI Technology |
2 / 11 page GS70328SJ/TS Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.11 11/2004 2/11 © 1999, GSI Technology X: “H” or “L” Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Truth Table CE OE WE DQ1 to DQ8 VDD Current H X X Not Selected ISB1, ISB2 L L H Read IDD LX L Write LH H High Z Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD –0.5 to +4.6 V Input Voltage VIN –0.5 to VDD + 0.5 ( ≤ 4.6 V max.) V Output Voltage VOUT –0.5 to VDD + 0.5 ( ≤ 4.6 V max.) V Allowable power dissipation PD 0.7 W Storage temperature TSTG –55 to 150 oC Memory Array Row Decoder Column Decoder Address Input Buffer Control I/O Buffer A0 CE WE OE DQ1 A14 DQ8 Block Diagram |
类似零件编号 - GS70328TS-10I |
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类似说明 - GS70328TS-10I |
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