BAT64-05 datasheet(1/4 Pages) JIANGSU

部件名	BAT64-05

功能描述	SCHOTTKY BARRIER DIODE

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制造商	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

网页	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

BAT64-04, BAT64-05, BAT64-06

SCHOTTKY BARRIER DIODE

FEATURES

For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

Integrated diffused guard ring

Low forward voltage

BAT64-06 MARKING:66S

BAT64-05 MARKING:65S

BAT64-04 MARKING: 64S

Maximum Ratings @Ta=25

℃

Parameter

Symbol

Limits

Unit

Peak reverse voltage

DC reverse

VRM

VR

40

V

Non-repetitive Peak forward surge current @t=8.3ms

IFSM

0.8

A

Forward current

IF

0.25

A

Power Dissipation

PD

250

mW

Thermal Resistance Junction−to−Ambient

RΘJA

400

℃/W

Junction temperature

Tj

1

25

℃

Storage temperature

Tstg

-55~+1

50

℃

Electrical Ratings @Ta=25

℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse breakdown voltage

VR

40

V

IR=10μA

Forward voltage

VF

350

430

520

750

mV

IF=1mA

IF=10mA

IF=30mA

IF=100mA

Reverse current

IR

2

μA

VR=

25V

Capacitance between terminals

CT

6

pF

VR=1V,f=1MHz

SOT-23

1

,

,201

www.cj-elec.com

BA

T64-06

BA

T64-05

BA

T64-04

Solid dot = Green molding compound device,if none,

the normal device.

类似零件编号 - BAT64-05

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BAT64-05	91Kb / 3P	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
Infineon Technologies A...	BAT64-05	491Kb / 7P	Silicon Schottky Diodes Mar-10-2004
Continental Device Indi...	BAT64-05	139Kb / 4P	SILICON PLANAR SCHOTTKY DIODES
Guangdong Kexin Industr...	BAT64-05	38Kb / 1P	Silicon Schottky Diodes
Infineon Technologies A...	BAT64-05	213Kb / 12P	Silicon Schottky Diodes 2007-06-11

More results

类似说明 - BAT64-05

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