2SK1019 datasheet(2/2 Pages) ISC

部件名	2SK1019

功能描述	Drain Current ?밒D=35A@ TC=25C

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

2

isc N-Channel Mosfet Transistor

2SK1019

·ELECTRICAL CHARACTERISTICS (T

C=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 1mA

450

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=1mA

2.5

3.5

5.0

V

RDS(on)

Drain-Source On-stage Resistance

VGS=10V; ID=15A

0.13

0.20

Ω

IGSS

Gate Source Leakage Current

VGS= ±30V;VDS= 0

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=450V; VGS= 0

500

uA

VSD

Forward On-Voltage

IS=35A; VGS=0

1.10

1.70

V

tr

Rise time

VGS=10V;ID=30A;

RL=25Ω

300

450

ns

ton

Turn-on time

360

450

ns

tf

Fall time

300

1350

ns

toff

Turn-off time

900

400

ns

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