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4N33SLT1-G 数据表(PDF) 2 Page - CT Micro International Corporation |
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4N33SLT1-G 数据表(HTML) 2 Page - CT Micro International Corporation |
2 / 13 page CT Microelectronics Rev 1 Proprietary & Confidential Page 2 Apr, 2014 4N29, 4N30, 4N31, 4N32, 4N33 H11B1, H11B2, H11B3, H11B255, TIL113 DC Input 6-Pin Photodarlington Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units Notes VISO Isolation voltage 5000 VRMS TOPR Operating temperature -55 ~ +100 0C TSTG Storage temperature -55 ~ +150 0C TSOL Soldering temperature 260 0C Emitter IF Forward current 60 mA IF(TRANS) Peak transient current (≤1µs P.W,300pps) 1 A VR Reverse voltage 6 V PD Power dissipation 120 mW Detector PD Power dissipation 150 mW BVCEO Collector-Emitter Breakdown Voltage 55 V BVCBO Collector-Base Breakdown Voltage 55 V BVECO Emitter-Collector Breakdown Voltage 7 V BVEBO Emitter-Base Breakdown Voltage 7 V |
类似零件编号 - 4N33SLT1-G |
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类似说明 - 4N33SLT1-G |
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