数据搜索系统,热门电子元器件搜索 |
|
MTB080P06J3 数据表(PDF) 1 Page - Cystech Electonics Corp. |
|
MTB080P06J3 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9 MTB080P06J3 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTB080P06J3 BVDSS -60V ID@VGS=-10V, TC=25°C -12.5A RDS(ON)@VGS=-10V, ID=-10A 82.5mΩ(typ) RDS(ON)@VGS=-5V, ID=-8A 107mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB080P06J3-0-T3-G TO-252 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel MTB080P06J3 TO-252(DPAK) G:Gate G D S D:Drain S:Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name |
类似零件编号 - MTB080P06J3 |
|
类似说明 - MTB080P06J3 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |