YSESDAR5V0P-10P datasheet(1/4 Pages) YEASHIN

部件名	YSESDAR5V0P-10P

功能描述	SMD ESD Protection Diode

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制造商	YEASHIN [Yea Shin Technology Co., Ltd]

网页	http://www.yeashin.com

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FEATURES

◆

MECHANICAL CHARACTERISTICS

◆

DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.01 20150530

H

SMD ESD Protection Diode

◆

Circuit diagram

Working voltage: 5.0 V

Low leakage current.

Low capacitance: 0.25 pF typical (I/O to GND)

IEC61000-4-2 (ESD)±14kV(Contact),±15kV(Air).

Case: DFN10p package,molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

Mounting position: Any

GND

Pin 3

I/O

Pin 1

I/O

Pin 2

I/O

Pin 4

I/O

Pin 5

DFN10P

Dimensions in inches and (millimeters)

0.100(2.55)

0.096(2.45)

0.041(1.05)

0.037(0.95)

0.016(0.40) Typ.

0.008(0.20) Typ.

0.022(0.55)

0.018(0.45)

0.014(0.35) Typ.

Package

4

3

2

1

GND

5

7

8

9

10

6

I/O

N/C

kV

A

W

±15

3

60

ESD

IPP

PPP

°C

-55 to +150

-55 to +125

TJ

Operating temperature range

ESD per IEC 61000-4-2(Air)

Peak pulse current ( tp = 8/20 us)

Peak pulse power ( tp = 8/20 us)

Parameter

Symbol

Value

Unit

ESD per IEC 61000-4-2(Contact)

Storage temperature range

TSTG

±14

°C

Maximum Rating (at TA=25 °C unless otherwise noted)

V

5

VRWM

Reverse stand-off voltage

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

IL

Clamping voltage

VC

V

50

nA

Any Channel Pin to Ground

= ±

IPP

2 A, Tp=8/20us,

VC

V

Junction capacitance

VR = 0 V, f = 1MHz

Any Channel Pin to Ground

Cj

pF

11

13

0.25

Leakage current

VR = 5.0V

Any Channel Pin to Ground

= ±

IPP

1 A, Tp=8/20us,

Electrical Characteristics (at TA=25 °C unless otherwise noted)

Breakdown voltage

IR = 1mA

V R

B

6.0

V

YSESDAR5V0P-10P

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制造商	部件名	数据表	功能描述
Yea Shin Technology Co....	YSESDAR5V0SP-10P	635Kb / 4P	SMD ESD Protection Diode

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