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2SC3856-P 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC3856-P
功能描述  Good Linearity of hFE
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC3856-P 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC3856-P Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC3856-P Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC3856-P Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website:www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2SC3856-P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
180
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
2.0
V
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
100
μA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
70
140
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
300
pF
fT
Current-Gain—Bandwidth Product
IE=-0.5A ; VCE= 12V
20
MHz
Switching times
ton
Turn-on Time
IC= 10A ,RL= 4Ω,
IB1= -IB2= 1A,VCC= 40V
0.5
μs
tstg
Storage Time
1.8
μs
tf
Fall Time
0.6
μs


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