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2SC3856-P 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3856-P 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC3856-P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 200V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 3A ; VCE= 4V 70 140 COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 300 pF fT Current-Gain—Bandwidth Product IE=-0.5A ; VCE= 12V 20 MHz Switching times ton Turn-on Time IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V 0.5 μs tstg Storage Time 1.8 μs tf Fall Time 0.6 μs |
类似零件编号 - 2SC3856-P |
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类似说明 - 2SC3856-P |
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