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MTB020N03KN6 数据表(PDF) 1 Page - Cystech Electonics Corp. |
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MTB020N03KN6 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C143N6 Issued Date : 2016.01.06 Revised Date : 2016.02.22 Page No. : 1/9 MTB020N03KN6 CYStek Product Specification N-Channel Enhancement Mode MOSFET BVDSS 30V ID@VGS=10V, TA=25°C 7A ID@VGS=10V, TC=25°C 8.8A RDS(ON)@VGS=10V, ID=7A 14.7 mΩ(typ) RDS(ON)@VGS=4.5V, ID=5A 18.9 mΩ(typ) MTB020N03KN6 Description The MTB020N03KN6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating package • ESD protected gate Ordering Information Device Package Shipping MTB020N03KN6-0-T1-G SOT-26 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTB020N03KN6 G:Gate S:Source D:Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name |
类似零件编号 - MTB020N03KN6 |
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类似说明 - MTB020N03KN6 |
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