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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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BF822 数据表(PDF) 2 Page - Diotec Semiconductor |
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BF822 数据表(HTML) 2 Page - Diotec Semiconductor |
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2 / 2 page  1) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 11 01.11.2003 High Voltage Transistors BF 820, BF 822 Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) V CE = 20 V, IC = 25 mA h FE 50 – – Gain-Bandwidth Product – Transitfrequenz V CE = 20 V, IC = 25 mA, f = 100 MHz f T 50 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität V CB = 30 V, IE = ie = 0, f = 1 MHz C CB0 – – 1.6 pF Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft R thA 87 K/W 2) junction to soldering point – Sperrschicht zu Lötpad R thS 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BF 721, BF 723 |
类似零件编号 - BF822 |
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类似说明 - BF822 |
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