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BCW60C 数据表(PDF) 1 Page - Diotec Semiconductor |
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BCW60C 数据表(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 38 01.11.2003 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCW 60 General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BCW 60 Collector-Emitter-voltage B open V CE0 32 V Collector-Base-voltage E open V CB0 32 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (DC) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Peak Base current – Basis-Spitzenstrom I BM 200 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, VCB = 32 V I CB0 – – 20 nA I E = 0, VCB = 32 V, Tj = 150 /CI CB0 – – 20 :A Emitter-Base cutoff current – Emitterreststrom I C = 0, VEB = 4 V I EB0 – – 20 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) I C = 10 mA, IB = 0.25 mA V CEsat 50 mV 350 mV I C = 50 mA, IB = 1.25 mA V CEsat 100 mV 550 mV |
类似零件编号 - BCW60C |
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类似说明 - BCW60C |
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