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BCW32 数据表(PDF) 2 Page - Diotec Semiconductor

部件名 BCW32
功能描述  Surface mount Si-Epitaxial PlanarTransistors
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

BCW32 数据表(HTML) 2 Page - Diotec Semiconductor

  BCW32 Datasheet HTML 1Page - Diotec Semiconductor BCW32 Datasheet HTML 2Page - Diotec Semiconductor  
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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
37
01.11.2003
General Purpose Transistors
BCW 31, BCW 32, BCW 33
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
I
C = 10 mA, IB = 0.5 mA
V
BEsat
750 mV
I
C = 50 mA, IB = 2.5 mA
V
BEsat
850 mV
DC current gain – Kollektor-Basis-Stromverhältnis 1)
V
CE = 5 V, IC = 10
:A
BCW 31
h
FE
190
BCW 32
h
FE
330
BCW 33
h
FE
600
V
CE = 5 V, IC = 2 mA
BCW 31
h
FE
110
220
BCW 32
h
FE
200
450
BCW 33
h
FE
420
800
Base-Emitter voltage – Basis-Emitter-Spannung 1)
V
CE = 5 V, IC = 2 mA
V
BEon
550 mV
700 mV
Gain-Bandwidth Product – Transitfrequenz
V
CE = 5 V, IC = 10 mA, f = 100 MHz
f
T
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
2.5 pF
Noise figure – Rauschzahl
V
CE = 5 V, IC = 200
:A, R
G = 2 k
S,
f = 1 kHz,
)f = 200 Hz
F
10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCW 29, BCW 30
Marking – Stempelung
BCW 31 = D1
BCW 32 = D2
BCW 33 = D3


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