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BC549B 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 BC549B
功能描述  Si-Epitaxial PlanarTransistors
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

BC549B 数据表(HTML) 1 Page - Diotec Semiconductor

  BC549B Datasheet HTML 1Page - Diotec Semiconductor BC549B Datasheet HTML 2Page - Diotec Semiconductor  
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1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6
01.11.2003
BC 546 ... BC 549
General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
500 mW
Plastic case
TO-92
Kunststoffgehäuse
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BC 546
BC 547
BC 548/549
Collector-Emitter-voltage
B open
V
CE0
65 V
45 V
30 V
Collector-Emitter-voltage
B shorted
V
CES
85 V
50 V
30 V
Collector-Base-voltage
E open
V
CB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
V
EB0
6 V
6 V
5 V
Power dissipation – Verlustleistung
P
tot
500 mW 1)
Collector current – Kollektorstrom (DC)
I
C
100 mA
Peak Coll. current – Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current – Basis-Spitzenstrom
I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- I
EM
200 mA
Junction temp. – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics, T
j = 25
/C
Kennwerte, T
j = 25
/C
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis
V
CE = 5 V, IC = 10
:Ah
FE
typ. 90
typ. 150
typ. 270
V
CE = 5 V, IC = 2 mA
h
FE
110...220
200...450
420...800
V
CE = 5 V, IC = 100 mA
h
FE
typ. 120
typ. 200
typ.400
h-Parameters at V
CE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverst.
h
fe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangsimpedanz
h
ie
1.6...4.5 k
S
3.2...8.5 k
S
6...15 k
S
Output admittance – Ausgangsleitwert
h
oe
18 < 30
:S
30 < 60
:S
60 < 110
:S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4


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