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CD4066BM 数据表(PDF) 6 Page - National Semiconductor (TI) |
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CD4066BM 数据表(HTML) 6 Page - National Semiconductor (TI) |
6 / 8 page Typical Performance Characteristics ‘‘ON’’ Resistance vs Signal Voltage for TAe25 C ‘‘ON’’ Resistance as a Function of Temperature for VDDbVSSe15V ‘‘ON’’ Resistance as a Function of Temperature for VDDbVSSe10V ‘‘ON’’ Resistance as a Function of Temperature for VDDbVSSe5V TLF5665 – 4 Special Considerations In applications where separate power sources are used to drive VDD and the signal input the VDD current capability should exceed VDD RL (RLeeffective external load of the 4 CD4066BMCD4066BC bilateral switches) This provision avoids any permanent current flow or clamp action of the VDD supply when power is applied or removed from CD4066BMCD4066BC In certain applications the external load-resistor current may include both VDD and signal-line components To avoid drawing VDD current when switch current flows into termi- nals 1 4 8 or 11 the voltage drop across the bidirectional switch must not exceed 06V at TAs25 C or 04V at TAl25 C (calculated from RON values shown) No VDD current will flow through RL if the switch current flows into terminals 2 3 9 or 10 6 |
类似零件编号 - CD4066BM |
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类似说明 - CD4066BM |
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