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1SV308 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 1SV308
功能描述  TOSHIBA Diode Silicon Epitaxial Pin Type
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

1SV308 数据表(HTML) 1 Page - Toshiba Semiconductor

  1SV308_14 Datasheet HTML 1Page - Toshiba Semiconductor 1SV308_14 Datasheet HTML 2Page - Toshiba Semiconductor 1SV308_14 Datasheet HTML 3Page - Toshiba Semiconductor  
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1SV308
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV308
VHF Tuner Band Switch Applications
• Small package.
• Low series resistance: rs = 1.1 Ω (typ.)
• Small total capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.95
1.0
V
Total capacitance
CT
VR = 1 V, f = 1 MHz
0.3
0.5
pF
Series resistance 1
rs (1)
IF = 10 mA, f = 100 MHz
1.0
1.5
Ω
Series resistance 2
rs (2)
IF = 10 mA, f = 1.5 GHz
1.1
Ω
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Start of commercial production
1997-04


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