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CSD17313Q2 数据表(PDF) 3 Page - Texas Instruments

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部件名 CSD17313Q2
功能描述  N-Channel NexFET Power MOSFET
Download  13 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

CSD17313Q2 数据表(HTML) 3 Page - Texas Instruments

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CSD17313Q2
www.ti.com
SLPS260E – MARCH 2010 – REVISED SEPTEMBER 2015
5
Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
30
V
IDSS
Drain-to-source leakage
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-source leakage
VDS = 0 V, VGS = +10 / –8 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
0.9
1.3
1.8
V
VGS = 3 V, ID = 4 A
31
42
m
RDS(on)
Drain-to-source on resistance
VGS = 4.5 V, ID = 4 A
26
32
m
VGS = 8 V, ID = 4 A
24
30
m
gfs
Transconductance
VDS = 15 V, ID = 4 A
16
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
260
340
pF
VGS = 0 V, VDS = 15 V,
Coss
Output capacitance
140
180
pF
ƒ = 1 MHz
Crss
Reverse transfer capacitance
13
17
pF
RG
Series gate resistance
1.3
2.6
Ω
Qg
Gate charge total (4.5 V)
2.1
2.7
nC
Qgd
Gate charge – gate-to-drain
0.4
nC
VDS = 15 V,
ID = 4 A
Qgs
Gate charge – gate-to-source
0.7
nC
Qg(th)
Gate charge at Vth
0.3
nC
Qoss
Output charge
VDS = 13.5 V, VGS = 0 V
3.8
nC
td(on)
Turn on delay time
2.8
ns
tr
Rise time
3.9
ns
VDS = 15 V, VGS = 4.5 V,
ID = 4 A, RG = 2 Ω
td(off)
Turn off delay time
4.2
ns
tf
Fall time
1.3
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 4 A, VGS = 0 V
0.85
1
V
Qrr
Reverse recovery charge
6.4
nC
VDD= 13.5 V, IF = 4 A,
di/dt = 300 A/
μs
trr
Reverse recovery time
12.9
ns
5.2 Thermal Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal resistance junction-to-case(1)
7.4
°C/W
RθJA
Thermal resistance junction-to-ambient(1)(2)
67
°C/W
(1)
RθJC is determined with the device mounted on a 1 inch
2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×
3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Copyright © 2010–2015, Texas Instruments Incorporated
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