Cascadable Amplifier

10 to 1000 MHz

Rev. V3

A19-1 / SMA19-1

1

1

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1

Parameter

Typical

Guaranteed

Units

25ºC

0º to 50ºC

-54º to +85ºC*

Frequency

MHz

10-1100

10-1000

10-1000

Small Signal Gain (min)

dB

11.5

10.5

10.0

Gain Flatness (max)

dB

±0.2

±0.6

±0.8

Reverse Isolation

dB

16

Noise Figure (max)

dB

5.5

6.5

7.0

Power Output

@ 1 dB comp. (min)

dBm

22.5

20.5

20.0

IP3

dBm

+35

IP2

dBm

+51

Second Order Harmonic IP

dBm

+58

VSWR Input / Output (max)

1.5:1 / 1.5:1

1.7:1 / 1.7:1

2.0:1 / 2.3:1

DC Current @ 15 Volts (max)

mA

90

94

99

Features

 HIGH OUTPUT POWER: +22.5 dBm (TYP.)

 HIGH THIRD ORDER I.P.: +35 dBm (TYP.)

 MEDIUM NOISE FIGURE: 6.0 dB (TYP.)

Description

The A19-1 RF amplifier is a discrete thin film hybrid design,

which incorporates the use of thin film manufacturing processes

for accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. An active DC biasing network is used for temperature-

stable performance, in addition to an RF Choke, used for power

supply decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A19-1

TO-8

SMA19-1

Surface Mount

CA19-1

SMA Connectorized **

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

+13 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

100ºC/W

0.907 W

Junction Temperature Rise

+91ºC