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CSD18563Q5A 数据表(PDF) 1 Page - Texas Instruments |
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CSD18563Q5A 数据表(HTML) 1 Page - Texas Instruments |
1 / 13 page 0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 18A TC = 125°C,I D = 18A G001 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 Qg - Gate Charge (nC) ID = 18A VDS = 30V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18563Q5A SLPS444C – JULY 2013 – REVISED JANUARY 2016 CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Ultra-Low Qg and Qgd • Soft Body Diode for Reduced Ringing • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • Low-Side FET for Industrial Buck Converter • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 5.7 m Ω, 60 V SON 5 mm × 6 mm NexFET™ power MOSFET was designed to pair with the CSD18537NQ5A control FET and act as the sync FET for a complete industrial buck converter chipset solution. Top View Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 15.0 nC Qgd Gate Charge Gate-to-Drain 2.9 nC RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 8.6 m Ω VGS = 10 V 5.7 m Ω VGS(th) Threshold Voltage 2.0 V . Ordering Information(1) DEVICE MEDIA QTY PACKAGE SHIP CSD18563Q5A 13-Inch Reel 2500 SON 5 × 6 mm Plastic Package Tape and Reel CSD18563Q5AT 7-Inch Reel 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package limited) 100 A Continuous Drain Current (Silicon limited), TC = 25°C 93 Continuous Drain Current(1) 15 IDM Pulsed Drain Current(2) 251 A PD Power Dissipation(1) 3.2 W Power Dissipation, TC = 25°C 116 TJ, Tstg Operating Junction Temperature, Storage Temperature –55 to 150 °C EAS Avalanche Energy, single pulse ID = 54 A, L = 0.1 mH, RG = 25 Ω 146 mJ (1) Typical RθJA = 40°C/W on a 1 inch 2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%. RDS(on) vs VGS Gate Charge |
类似零件编号 - CSD18563Q5A_16 |
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类似说明 - CSD18563Q5A_16 |
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