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CSD18563Q5A 数据表(PDF) 6 Page - Texas Instruments |
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CSD18563Q5A 数据表(HTML) 6 Page - Texas Instruments |
6 / 13 page 0 20 40 60 80 100 120 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 5000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC Single Pulse Max RthetaJC = 1.3ºC/W G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 −75 −25 25 75 125 175 TC - Case Temperature (ºC) VGS = 4.5V VGS = 10V ID =18A G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 6 CSD18563Q5A SLPS444C – JULY 2013 – REVISED JANUARY 2016 www.ti.com Product Folder Links: CSD18563Q5A Submit Documentation Feedback Copyright © 2013–2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature |
类似零件编号 - CSD18563Q5A_16 |
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类似说明 - CSD18563Q5A_16 |
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