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IRLML6302 数据表(PDF) 4 Page - International Rectifier

部件名 IRLML6302
功能描述  HEXFET Power MOSFET
Download  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRLML6302 数据表(HTML) 4 Page - International Rectifier

  IRLML6302 Datasheet HTML 1Page - International Rectifier IRLML6302 Datasheet HTML 2Page - International Rectifier IRLML6302 Datasheet HTML 3Page - International Rectifier IRLML6302 Datasheet HTML 4Page - International Rectifier IRLML6302 Datasheet HTML 5Page - International Rectifier IRLML6302 Datasheet HTML 6Page - International Rectifier IRLML6302 Datasheet HTML 7Page - International Rectifier IRLML6302 Datasheet HTML 8Page - International Rectifier  
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IRLML6402
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0
3
6
9
12
0
2
4
6
8
10
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-3.7A
V
= -10V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
-V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°


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