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SPI16N50C3 数据表(PDF) 8 Page - Infineon Technologies AG |
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SPI16N50C3 数据表(HTML) 8 Page - Infineon Technologies AG |
8 / 13 page 2004-04-07 Rev. 2.1 Page 8 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD -1 10 0 10 1 10 2 10 A SPP16N50C3 T j = 25 °C typ T j = 25 °C (98%) T j = 150 °C typ T j = 150 °C (98%) 14 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0 2 4 6 8 10 12 A 16 Tj(start) = 25°C Tj(start) = 125°C 15 Avalanche energy EAS = f (Tj) par.: ID = 8 , VDD = 50 V 20 40 60 80 100 120 °C 160 Tj 0 0.1 0.2 0.3 mJ 0.5 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 450 460 470 480 490 500 510 520 530 540 550 560 570 V 600 SPP16N50C3 |
类似零件编号 - SPI16N50C3 |
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类似说明 - SPI16N50C3 |
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