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SPI08N50C3 数据表(PDF) 3 Page - Infineon Technologies AG

部件名 SPI08N50C3
功能描述  Cool MOS??Power Transistor
Download  13 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI08N50C3 数据表(HTML) 3 Page - Infineon Technologies AG

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2003-06-27
Page 3
SPP08N50C3, SPI08N50C3
SPA08N50C3
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=4.6A
-
6
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f
=1MHz
-
750
-
pF
Output capacitance
Coss
-
350
-
Reverse transfer capacitance
Crss
-
12
-
Effective output capacitance,4)
energy related
Co(er)
VGS=0V, VDS=400
-
56
-
Effective output capacitance,5)
time related
Co(tr)
-
30
-
Turn-on delay time
td(on)
VDD=380V, VGS=0/10V,
ID=7.6A,
RG=12Ω
-
6
-
ns
Rise time
tr
-
5
-
Turn-off delay time
td(off)
-
60
-
Fall time
tf
-
7
-
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=400V, ID=7.6A
-
3
-
nC
Gate to drain charge
Qgd
-
17
-
Gate charge total
Qg
VDD=400V, ID=7.6A,
VGS=0 to 10V
-
32
-
Gate plateau voltage
V(plateau) VDD=400V, ID=7.6A
-
5
-
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P
AV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.


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