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SPI80N06S2L-05 数据表(PDF) 7 Page - Infineon Technologies AG

部件名 SPI80N06S2L-05
功能描述  OptiMOS Power-Transistor
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPI80N06S2L-05 数据表(HTML) 7 Page - Infineon Technologies AG

  SPI80N06S2L-05 Datasheet HTML 1Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 2Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 3Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 4Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 5Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 6Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 7Page - Infineon Technologies AG SPI80N06S2L-05 Datasheet HTML 8Page - Infineon Technologies AG  
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2003-05-09
Page 7
SPI80N06S2L-05
SPP80N06S2L-05,SPB80N06S2L-05
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
25
45
65
85
105
125
145
°C
185
Tj
0
100
200
300
400
500
600
700
mJ
850
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
0
40
80
120
160
200 nC
260
QGate
0
2
4
6
8
10
12
V
16
SPP80N06S2L-05
0,8 VDS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
-60
-20
20
60
100
140
°C
200
Tj
50
52
54
56
58
60
62
V
66
SPP80N06S2L-05


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