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SPI42N03S2L-13 数据表(PDF) 3 Page - Infineon Technologies AG |
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SPI42N03S2L-13 数据表(HTML) 3 Page - Infineon Technologies AG |
3 / 10 page SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 850 1130 pF Output capacitance C oss - 330 440 Reverse transfer capacitance Crss - 90 130 Turn-on delay time t d(on) - 6.5 9.8 ns Rise time t r -12 18 Turn-off delay time t d(off) -24 36 Fall time t f - 14.5 21.8 Gate Charge Characteristics Gate to source charge Q gs - 2.7 3.6 nC Gate to drain charge Q gd - 7.9 11.9 Gate charge total Q g - 22.9 30.5 Gate plateau voltage V plateau - 3.5 - V Reverse Diode Diode continous forward current I S - - 42 A Diode pulse current I S,pulse - - 248 Diode forward voltage V SD V GS=0 V, I F=42 A, T j=25 °C - 0.95 1.25 V Reverse recovery time t rr -24 31 ns Reverse recovery charge Q rr -18 23 nC V R=15 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=15 V, V GS=10 V, I D=21 A, R G=7.8 Ω V DD=24 V, I D=21 A, V GS=0 to 10 V Rev. 2.0 page 3 2004-06-04 |
类似零件编号 - SPI42N03S2L-13 |
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类似说明 - SPI42N03S2L-13 |
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