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ACE2308E 数据表(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2308E 数据表(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE2308E N-Channel 30-V MOSFET VER 1.1 2 Ordering information ACE2308EBM + H Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 0.4 V Gate-Body Leakage VGS(th) VDS = 0 V, VGS = ±12 V ±10 uA Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 uA VDS = 16 V, VGS = 0 V, TJ = 55°C 25 On-State Drain Current a ID(on) VDS = 5 V, VGS = 4.5 V 5 A Drain-Source On-Resistance a rDS(on) VGS = 4.5 V, ID = 3 A 60 m Ω VGS = 2.5 V, ID = 2.4 A 82 Forward Transconductance a gfs VDS = 15 V, ID = 2.8 A 12 S Diode Forward Voltage a VSD IS = 1 A, VGS = 0 V 0.69 V Dynamic b Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 3 A 6 nC Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 2.0 Turn-On Delay Time td(on) VDS = 15 V, RL = 3.6 Ω, I D = 3 A, VGEN = 4.5 V, RGEN = 6 Ω 8 nS Rise Time tr 21 Turn-Off Delay Time td(off)* 48 Fall Time tf 26 Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 417 pF Output Capacitance Coss 77 Reverse Transfer Capacitance Crss 68 Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. BM : SOT-23-3 Pb - free Halogen - free |
类似零件编号 - ACE2308E |
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类似说明 - ACE2308E |
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