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STD7NM64N 数据表(PDF) 4 Page - STMicroelectronics |
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STD7NM64N 数据表(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STD7NM64N 4/16 DocID025081 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 1 mA 640 V IDSS Zero gate voltage drain current VDS = 640 V 1 µA VDS = 640 V, TC=125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.5 A 0.88 1.05 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 -363 - pF Coss Output capacitance - 24.6 - pF Crss Reverse transfer capacitance -1.1 - pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 130 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 - 5.4 - Ω Qg Total gate charge VDD = 480 V, ID = 5 A, VGS = 10 V (see Figure 14) -14 - nC Qgs Gate-source charge - 2.7 - nC Qgd Gate-drain charge - 7.7 - nC |
类似零件编号 - STD7NM64N |
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类似说明 - STD7NM64N |
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