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STD7NM64N 数据表(PDF) 4 Page - STMicroelectronics

部件名 STD7NM64N
功能描述  Low input capacitance and gate charge
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD7NM64N 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD7NM64N
4/16
DocID025081 Rev 1
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
640
V
IDSS
Zero gate voltage
drain current
VDS = 640 V
1
µA
VDS = 640 V, TC=125 °C
100
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 2.5 A
0.88
1.05
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-363
-
pF
Coss
Output capacitance
-
24.6
-
pF
Crss
Reverse transfer
capacitance
-1.1
-
pF
Coss eq.
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
130
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz, ID=0
-
5.4
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 5 A,
VGS = 10 V
(see Figure 14)
-14
-
nC
Qgs
Gate-source charge
-
2.7
-
nC
Qgd
Gate-drain charge
-
7.7
-
nC


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