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STB33N60DM2 数据表(PDF) 1 Page - STMicroelectronics |
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STB33N60DM2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 20 page November 2015 DocID026854 Rev 2 1/20 This is information on a product in full production. www.st.com STB33N60DM2, STP33N60DM2, STW33N60DM2 N- channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax. RDS(on) max. ID STB33N60DM2 650 V 0.130 Ω 24 A STP33N60DM2 650 V 0.130 Ω 24 A STW33N60DM2 650 V 0.130 Ω 24 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB33N60DM2 33N60DM2 D²PAK Tape and reel STP33N60DM2 33N60DM2 TO-220 Tube STW33N60DM2 33N60DM2 TO-247 Tube |
类似零件编号 - STB33N60DM2 |
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类似说明 - STB33N60DM2 |
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