STB7ANM60N datasheet(7/20 Pages) STMICROELECTRONICS

部件名	STB7ANM60N

功能描述	Low input capacitance and gate charge

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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7 / 20 page

DocID023350 Rev 2

7/20

STB7ANM60N, STD7ANM60N

Electrical characteristics

20

Figure 8. Gate charge vs gate-source voltage

Figure 9. Static drain-source on resistance

Figure 10. Capacitance variations

Figure 11. Output capacitance stored energy

Figure 12. Normalized gate threshold voltage vs

temperature

Figure 13. Normalized on-resistance vs

temperature

VGS

6

4

2

0

4

Qg(nC)

(V)

12

8

6

8

10

VDD=480V

ID=5A

14

12

300

200

100

0

400

500

VDS

2

10

16

VDS

(V)

AM06479v1

RDS(on)

0.78

0.76

0.74

0

2

ID(A)

(Ohm)

1

3

0.80

0.82

VGS=10V

4

5

0.84

0.86

0.88

AM06480v1

C

1000

100

10

1

0.1

10

VDS(V)

(pF)

1

100

Ciss

Coss

Crss

AM06481v1

Eoss

1.0

0.5

0

100

VDS(V)

(µJ)

400

200 300

1.5

500

600

2.0

2.5

AM06482v1

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID=250µA

AM06483v1

RDS(on)

1.9

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.7

1.1

1.5

1.7

2.1

AM06484v1

ID=2.5A

类似零件编号 - STB7ANM60N

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STB7ANM60N	295Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STB7ANM60N	1Mb / 10P	N-Channel 650V (D-S)Power MOSFET

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