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BUZ345 数据表(PDF) 1 Page - Infineon Technologies AG |
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BUZ345 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page Data Sheet 1 05.99 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 345 100 V 41 A 0.045 Ω TO-218 AA C67078-S3121-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 ˚C ID 41 A Pulsed drain current TC = 25 ˚C IDpuls 164 Avalanche current,limited by Tjmax IAR 41 Avalanche energy,periodic limited by Tjmax EAR 18 mJ Avalanche energy, single pulse ID = 41 A, VDD = 25 V, RGS = 25 Ω L = 249.9 µH, Tj = 25 ˚C EAS 280 Gate source voltage VGS ± 20 V Power dissipation TC = 25 ˚C Ptot 150 W Operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.83 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 BUZ 345 |
类似零件编号 - BUZ345 |
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类似说明 - BUZ345 |
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