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STB30NF20L 数据表(PDF) 3 Page - STMicroelectronics |
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STB30NF20L 数据表(HTML) 3 Page - STMicroelectronics |
3 / 14 page STB30NF20L Electrical ratings Doc ID 022753 Rev 2 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 200 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC=100 °C 19 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 120 A PTOT Total dissipation at TC = 25 °C 150 W Derating factor 1 W/°C dv/dt(2) 2. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD = 80%V(BR)DSS. Peak diode recovery voltage slope 10 V/ns TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case max. 1 °C/W RthJA Thermal resistance junction-ambient max. 62.5 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 30 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 140 mJ |
类似零件编号 - STB30NF20L |
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类似说明 - STB30NF20L |
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