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STD28P3LLH6AG 数据表(PDF) 5 Page - STMicroelectronics |
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STD28P3LLH6AG 数据表(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD28P3LLH6AG Electrical characteristics DocID028397 Rev 1 5/15 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - -12 A ISDM (1) Source-drain current (pulsed) - -48 A VSD (2) Forward on voltage VGS = 0 V, ISD = -12 A - -1.3 V trr Reverse recovery time ISD = -12 A, di/dt = 100 A/µs, VDD = -24 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 17.8 ns Qrr Reverse recovery charge - 10.2 nC IRRM Reverse recovery current - -1.2 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
类似零件编号 - STD28P3LLH6AG |
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类似说明 - STD28P3LLH6AG |
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