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STB18N60DM2 数据表(PDF) 1 Page - STMicroelectronics |
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STB18N60DM2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 15 page January 2016 DocID027677 Rev 3 1/15 This is information on a product in full production. www.st.com STB18N60DM2 N- channel 600 V, 0.260 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STB18N60DM2 600 V 0.295 Ω 12 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB18N60DM2 18N60DM2 D²PAK Tape and Reel 1 3 TAB D²PAK 2 AM15572v1_tab D(2, TAB) G(1) S(3) |
类似零件编号 - STB18N60DM2 |
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类似说明 - STB18N60DM2 |
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