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SI4826-A10 数据表(PDF) 10 Page - Silicon Laboratories |
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SI4826-A10 数据表(HTML) 10 Page - Silicon Laboratories |
10 / 24 page Si4822/26-A10 10 Rev.1.0 Table 8. Thermal Conditions Parameter Symbol Min Typ Max Unit Thermal Resistance* JA —80 — °C/W Ambient Temperature TA 025 70 °C Junction Temperature TJ —— 77 °C *Note: Thermal resistance assumes a multi-layer PCB with the exposed pad soldered to a topside PCB pad. Table 9. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit Supply Voltage VDD –0.5 to 5.8 V Input Current3 IIN 10 mA Operating Temperature TOP –40 to 95 °C Storage Temperature TSTG –55 to 150 °C RF Input Level4 0.4 VPK Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended operating conditions for extended periods may affect device reliability. 2. The Si4822/26-A10 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations. 3. For input pins RST, SDIO, SCLK, XTALO, XTALI, BAND, TUNE2, TUNE1, IRQ, and LNA_EN. 4. At RF input pins, FMI, and AMI. |
类似零件编号 - SI4826-A10 |
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类似说明 - SI4826-A10 |
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