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BF999 数据表(PDF) 1 Page - Infineon Technologies AG |
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BF999 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BF999 Nov-08-2002 1 Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications 1 2 3 VPS05161 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BF999 LBs 1 = G 2 = D 3 = S SOT23 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current IGSM 10 mA Total power dissipation , TS 76 °C Ptot 200 mW Storage temperature Tstg -55 ... 150 °C Channel temperature Tch 150 Thermal Resistance Channel - soldering point1) Rthchs 370 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BF999 |
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类似说明 - BF999 |
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