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BCW68G 数据表(PDF) 1 Page - Infineon Technologies AG |
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BCW68G 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BCW67, BCW68 1 Jul-10-2001 PNP Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN) 1 2 3 VPS05161 Type Marking Pin Configuration Package BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H DAs DBs DCs DFs DGs DHs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BCW67 BCW68 Unit Collector-emitter voltage VCEO 32 45 V Collector-base voltage VCBO 45 60 Emitter-base voltage VEBO 5 5 DC collector current IC 800 mA Peak collector current ICM 1 A Base current mA 100 IB Peak base current IBM 200 Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BCW68G |
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类似说明 - BCW68G |
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