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SI5351C-B-GM 数据表(PDF) 4 Page - Silicon Laboratories |
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SI5351C-B-GM 数据表(HTML) 4 Page - Silicon Laboratories |
4 / 31 page Si5350C-B 4 Rev. 1.0 1. Electrical Specifications Table 2. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Ambient Temperature TA –40 25 85 °C Core Supply Voltage VDD 1.71 1.8 1.89 V 2.25 2.5 2.75 V 3.0 3.3 3.60 V Output Buffer Voltage VDDOx 1.71 1.8 1.89 V 2.25 2.5 2.75 V 3.0 3.3 3.60 V Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted. VDD and VDDOx can be operated at independent voltages. Power supply sequencing for VDD and VDDOx requires that all VDDOx be powered up either before or at the same time as VDD. Table 3. DC Characteristics (VDD = 1.8 V ±5%, 2.5 V ±10%, or 3.3 V ±10%, TA = –40 to 85 °C) Parameter Symbol Test Condition Min Typ Max Unit Core Supply Current* IDD Enabled 3 outputs — 20 35 mA Enabled 8 outputs — 25 45 mA Power Down (PDN = VDD)— — 50 µA Output Buffer Supply Current (Per Output)* IDDOx CL =5pF — 2.2 5.6 mA Input Current IP1-P3 Pins P1, P2, P3 VP1-P3 <3.6 V —— 10 µA IP0 Pin P0 — — 30 µA Output Impedance ZOI 3.3 V VDDO, default high drive. —50 — *Note: Output clocks less than or equal to 100 MHz. |
类似零件编号 - SI5351C-B-GM |
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类似说明 - SI5351C-B-GM |
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