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BC849W 数据表(PDF) 2 Page - Infineon Technologies AG |
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BC849W 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page BC846W...BC850W 2 Dec-11-2001 Maximum Ratings Parameter Symbol BC846W BC847W BC850W BC848W BC849W Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 6 6 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current 200 IEM Total power dissipation , TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 105 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC846W BC847/850W BC848/849W V(BR)CEO 65 45 30 - - - - - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 BC846W BC847/850W BC848/849W V(BR)CBO 80 50 30 - - - - - - 1For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BC849W |
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类似说明 - BC849W |
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