BC856AT datasheet(2/6 Pages) INFINEON

部件名	BC856AT

功能描述	PNP Silicon AF Transistor

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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2 / 6 page

Jan-08-2002

2

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO

65

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

80

-

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

V(BR)CES

80

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

-

15

nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

5

µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

BC856AT

IC = 10 µA, VCE = 5 V

BC856BT

IC = 2 mA, VCE = 5 V

BC856AT

IC = 2 mA, VCE = 5 V

BC856BT

hFE

-

125

220

140

250

180

290

-

250

475

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

250

300

650

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

850

-

mV

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

-

650

-

750

820

1) Pulse test: t < 300

s; D < 2%

类似零件编号 - BC856AT

制造商	部件名	数据表	功能描述
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