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BC807-25 数据表(PDF) 1 Page - Infineon Technologies AG |
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BC807-25 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 5 page BC807, BC808 1 Nov-29-2001 PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Comlementary types: BC817, BC818 (NPN) 1 2 3 VPS05161 Type Marking Pin Configuration Package BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 5As 5Bs 5Cs 5Es 5Fs 5Gs 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Symbol BC807 BC808 Unit Collector-emitter voltage VCEO 45 25 V Collector-base voltage VCBO 50 30 Emitter-base voltage VEBO 5 5 mA DC collector current 500 IC Peak collector current 1 A ICM Base current mA 100 IB Peak base current 200 IBM Total power dissipation, TS = 79 °C Ptot mW 330 Junction temperature 150 °C Tj Tstg Storage temperature -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 215 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BC807-25 |
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类似说明 - BC807-25 |
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