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BC807U 数据表(PDF) 1 Page - Infineon Technologies AG |
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BC807U 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page BC807U Nov-29-2001 1 PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package VPW09197 1 2 3 4 5 6 EHA07175 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 Type Marking Pin Configuration Package BC807U 5Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Value Symbol Unit Collector-emitter voltage V VCEO 45 Collector-base voltage VCBO 50 VEBO 5 Emitter-base voltage DC collector current IC 500 mA Peak collector current A 1 ICM IB 100 Base current mA Peak base current IBM 200 Total power dissipation, TS = 115 °C Ptot 330 mW Junction temperature Tj °C 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 105 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
类似零件编号 - BC807U |
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类似说明 - BC807U |
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