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BAW79 数据表(PDF) 2 Page - Infineon Technologies AG |
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BAW79 数据表(HTML) 2 Page - Infineon Technologies AG |
2 / 4 page Feb-03-2003 2 BAW78.../BAW79... 1For calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 400 - - V Reverse current VR = 400 V VR = 400 V, TA = 150 °C IR - - - - 1 50 µA Forward voltage IF = 1 A IF = 2 A VF - - - - 1.6 2 V AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz CT - 10 - pF Reverse recovery time IF = 200mA, IR = 200mA, measured at IR = 20mA , RL = 100 trr - 1 - µs Test circuit for reverse recovery time EHN00019 Ι F D.U.T. Oscillograph Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograp: R = 50 , tr = 0.35ns C 1pF |
类似零件编号 - BAW79 |
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类似说明 - BAW79 |
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