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BAW79 数据表(PDF) 1 Page - Infineon Technologies AG |
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BAW79 数据表(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page Feb-03-2003 1 BAW78.../BAW79... Silicon Switching Diodes Switching applications High breakdown voltage BAW79D BAW78D 3 12 2 3 12 2 Type Package Configuration Marking BAW78D BAW79D SOT89 SOT89 single common cathode GD GH Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 400 V Peak reverse voltage VRM 400 Forward current IF 1 A Peak forward current IFM 1 Surge forward current, t = 1 µs IFS 10 Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Ptot 1 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BAW78D BAW79D RthJS ≤ 25 ≤ 35 K/W |
类似零件编号 - BAW79 |
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类似说明 - BAW79 |
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