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LF353-N 数据表(PDF) 4 Page - Texas Instruments

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部件名 LF353-N
功能描述  Wide Bandwidth Dual JFET Input Operational Amplifier
Download  17 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

LF353-N 数据表(HTML) 4 Page - Texas Instruments

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LF353-N
SNOSBH3F – APRIL 1998 – REVISED MARCH 2013
www.ti.com
DC Electrical Characteristics
LF353-N
Symbol
Parameter
Conditions
Units
MIn
Typ
Max
VOS
Input Offset Voltage
RS=10kΩ, TA=25°C
5
10
mV
Over Temperature
13
mV
ΔVOS/ΔT
Average TC of Input Offset Voltage
RS=10 kΩ
10
μV/°C
IOS
Input Offset Current
Tj=25°C
(1) (2)
25
100
pA
Tj≤70°C
4
nA
IB
Input Bias Current
Tj=25°C
(1) (2)
50
200
pA
Tj≤70°C
8
nA
RIN
Input Resistance
Tj=25°C
1012
Ω
AVOL
Large Signal Voltage Gain
VS=±15V, TA=25°C
25
100
V/mV
VO=±10V, RL=2 kΩ
Over Temperature
15
V/mV
VO
Output Voltage Swing
VS=±15V, RL=10kΩ
±12
±13.5
V
VCM
Input Common-Mode Voltage
VS=±15V
±11
+15
V
Range
−12
V
CMRR
Common-Mode Rejection Ratio
RS≤ 10kΩ
70
100
dB
PSRR
Supply Voltage Rejection Ratio
See(3)
70
100
dB
IS
Supply Current
3.6
6.5
mA
(1)
These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
(2)
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
Tj. Due to the limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation
the junction temperature rises above the ambient temperature as a result of internal power dissipation, PD. Tj=TAjA PD where θjA is the
thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
(3)
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with
common practice. VS = ±6V to ±15V.
AC Electrical Characteristics
(1)
LF353-N
Symbol
Parameter
Conditions
Units
Min
Typ
Max
Amplifier to Amplifier Coupling
TA=25°C, f=1 Hz−20 kHz
−120
dB
(Input Referred)
SR
Slew Rate
VS=±15V, TA=25°C
8.0
13
V/
μs
GBW
Gain Bandwidth Product
VS=±15V, TA=25°C
2.7
4
MHz
en
Equivalent Input Noise Voltage
TA=25°C, RS=100Ω, f=1000 Hz
16
nV/
√Hz
in
Equivalent Input Noise Current
Tj=25°C, f=1000 Hz
0.01
pA/
√Hz
THD
Total Harmonic Distortion
AV=+10, RL=10k, VO=20Vp−p,
<0.02
%
BW=20 Hz-20 kHz
(1)
These specifications apply for VS=±15V and 0°C≤TA≤+70°C. VOS, IBand IOS are measured at VCM=0.
4
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Product Folder Links: LF353-N


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